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HMC441LP3的技术资料
来源：灿荣电子商行; (2009-4-21 20:01:18) 浏览次数：332
HMC441LP3的产品特征：
Gain: 14 dB
Saturated Power: +20 dBm @ 20% PAE
Single Supply Voltage:
+5.0 V w/ Optional Gate Bias
50 Ohm Matched Input/Output
3 x 3 x 1 mm QFN SMT Package
以上信息由『维库电子开发网』（www.weeqoo.com）整理。
HMC441LP3的技术参数：
| Drain Bias Voltage (Vdd) | +6.0 Vdc |
| Gate Bias Voltage (Vgg1,Vgg2) | -8.0 to 0 Vdc |
| RF Input Power (RFin)(Vdd = +5.0 Vdc) | +20 dBm |
| Channel Temperature | 150 °C |
| Continuous Pdiss (T= 85 °C) (derate 10 mW/°C above 85 °C) |
0.65 W |
| Thermal Resistance (channel to die bottom) |
100 °C/W |
| Storage Temperature | -65 to +150 °C |
| Operating Temperature | -40 to +85 °C |
资料整理：维库电子开发网（www.weeqoo.com），全球最大的芯片PDF资料下载基地。
HMC441LP3的产品描述：
The HMC441LP3 is a broadband GaAs PHEMT MMIC Medium Power Amplifi er which operates between 6.5 and 13.5 GHz. The leadless plastic QFN surface mount packaged amplifi er provides 14 dB of gain, +20 dBm saturated power at 20% PAE from a +5.0 V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifi er does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers.